| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-408 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate |
2001-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-08-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92cdceee5622a04223d679db2bb29d1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6285bb5ca7abc51448a3d5053f57985a |
| publicationDate |
2002-08-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6436779-B2 |
| titleOfInvention |
Semiconductor device having a plurality of resistive paths |
| abstract |
A semiconductor device has first and second opposed major surfaces ( 10 a and 10 b ). A semiconductor first region ( 11 ) is provided between second ( 12 or 120 ) and third ( 14 ) regions such that the second region ( 12 or 120 ) forms a rectifying junction ( 13 or 130 ) with the first region ( 11 ) and separates the first region ( 11 ) from the first major surface ( 10 a ) while the third region ( 14 ) separates the first region ( 11 ) from the second major surface ( 10 b ). A plurality of semi-insulating or resistive paths ( 21 ) are dispersed within the first region ( 1 ′) such that each path extends through the first region from the second to the third region. In use of the device when a reverse biasing voltage is applied across the rectifying junction ( 13 or 130 ) an electrical potential distribution is generated along the resistive paths ( 21 ) which causes a depletion region in the first region ( 11 ) to extend through the first region ( 11 ) to the third region ( 14 ) to increase the reverse breakdown voltage of the device. The device may be, for example a pn-n diode in which case the second region is a semiconductive region of the opposite conductivity type to the first region or a Schottky diode in which case the second region ( 120 ) forms a Schottky contact with the first region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8518777-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224853-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148233-B2 |
| priorityDate |
2000-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |