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publicationDate 2003-04-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6544886-B2
titleOfInvention Process for isolating an exposed conducting surface
abstract A method of isolating an exposed conductive surface. An aluminum layer ( 130 ) is selectively formed over the exposed conductive ( 106 ) surface (e.g., Cu) but not over the surrounding dielectric ( 110 ) surface using a thermal CVD process. The aluminum layer ( 130 ) is then oxidized to form a thin isolating aluminum-oxide ( 108 ) over only the conductive surface. The isolating aluminum-oxide provides a barrier for the Cu while taking up minimal space and reducing the effective dielectric constant.
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