| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-976 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2001-08-24^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-06-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64247962de6d8165a2e7fd5ae12c83ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74d13946368791f102592978b7039bb9 |
| publicationDate |
2003-06-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6573607-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
There is presented a semiconductor device including multiple levels of copper interconnects; wherein the surface of a copper interconnect corresponding to at least one underlying layer of another copper interconnect layer is turned into copper oxide to a thickness of 30 nm or more by oxidation conducted at the oxidation rate of 20 nm/min or less, and thereby the reflection of the exposure light from the lower-level copper interconnect is prevented, in forming by means of photolithography a trench to form a copper interconnect through damascening. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865501-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7129534-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016111342-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160045611-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008146028-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6893978-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8791018-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006014374-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007298608-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11208732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004201919-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10443146-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101425493-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8227335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I718108-B |
| priorityDate |
1998-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |