http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6580072-B1

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filingDate 2000-05-03^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-06-17^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1c8d71b236dc40470409a84f7d739b5
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publicationDate 2003-06-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6580072-B1
titleOfInvention Method for performing failure analysis on copper metallization
abstract Described are methods of adapting FIB techniques to copper metallization, and to structures that result from the application of such techniques. A method in accordance with the invention can be used to sever copper traces without damaging adjacent material or creating conductive bridges to adjacent traces. n Semiconductor devices that employ copper traces typically include a protective passivation layer that protects the copper. This passivation layer is removed to render the copper traces visible to an FIB operator. The copper surface is then oxidized, as by heating the device in air, to form a copper-oxide layer on the exposed copper. With the copper-oxide layer in place, an FIB is used to mill through the copper-oxide and copper layers of a selected copper trace to sever the trace. The copper-oxide layer protects copper surfaces away from the mill site from reactive chemicals used during the milling process. In one embodiment, a copper-oxide layer of at least 40 nanometers thick affords adequate protection.
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