patent/US-6618083-B1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6618083-B1

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classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-77
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filingDate	1998-12-30^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2003-09-09^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b71ac4778dc66053a73d93cac37c0e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb249bffbf6bb57ef4727fc6ca657ce
publicationDate	2003-09-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6618083-B1
titleOfInvention	Mismatch-independent reset sensing for CMOS area array sensors
abstract	Two methods for suppressing the fixed pattern noise effects of a pixel reset switch by ensuring that the reset NMOS device operates in its linear region. The first approach uses a separate reset switch supply voltage, VRES, set to at least one threshold voltage below the sensing switch supply voltage, Vdd. The second approach uses a charge pump and level shifter to push the reset gate voltage at least one threshold voltage higher than a supply voltage common to both the reset and sense transistors.
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priorityDate	1997-12-31^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID127594997 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID53710490

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