| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-07-05^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c354bd030b70ecfe0461887800023094 |
| publicationDate |
2004-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6713847-B1 |
| titleOfInvention |
Method of fabricating semiconductor device, and semiconductor device |
| abstract |
Wiring of the Dual-Damascene structure is formed without using the CMP method. n As shown in FIG. 1 A, oxygen ions are implanted from an upper surface under the condition that the oxygen ions reach a position a little deeper than the thickness t 1 of the copper film 11 on the SiO 2 layer 2 . Due to the foregoing, as shown in FIG. 1 B, the copper film 11 on the SiO 2 layer 2 and the copper films on the upper portions of the first wiring section 18 and the second wiring section 19 are oxidized, and the oxidized layer 13 is formed. Since the dielectric constant of copper oxide is high, the first wiring section 18 and the second wiring section 19 are insulated from each other. Therefore, it is possible to obtain a highly reliable wiring structure easily. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7823114-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7373627-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006059445-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6982200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008201682-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6978434-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004152256-A1 |
| priorityDate |
1998-02-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |