http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6730941-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32308 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 2003-01-29^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-05-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9d171ddde0e3563514f613c3b7eb68c |
| publicationDate | 2004-05-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6730941-B2 |
| titleOfInvention | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode |
| abstract | A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer. The top electrode includes a lower electrode and an upper electrode, the lower electrode is in direct contact with the second boron-phosphide-based semiconductor layer and formed of a metal incapable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer, and the upper electrode is provided on the lower electrode and formed of a metal capable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005098801-A1 |
| priorityDate | 2002-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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