| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b863345c103b7c82f988789921a536ce |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B2006-12097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-152
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B2006-121 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C4-0042 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-132 |
| filingDate |
2003-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c3ea9b761b67ced30c0fdaef2e17152
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e542aad306579914c0f8d9204a8630f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab5461106ca64c7003014273c495bfc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_673a7ffd3d272196c7ab00a0a30323ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_453f8713e3dbe688c57f2bd868d9f9ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b1ef68101b4526d97c7b180e03debda |
| publicationDate |
2004-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6771868-B2 |
| titleOfInvention |
Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides |
| abstract |
Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004240820-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7056833-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7202183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109324369-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7273793-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7043133-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007297715-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005064729-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005196976-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7468237-B2 |
| priorityDate |
2001-07-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |