| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5529b1e4a87c759d6d18a087697c2349 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
2002-02-14^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-09-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3e162a0694b871fb4ae45ef46b98eb0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8e76de36f2f270d8521a5701374e015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82bc6d33b7160e764f7da4e87f49f778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27dce304a515a6cdb47b93fbbc4285a2 |
| publicationDate |
2004-09-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6797995-B2 |
| titleOfInvention |
Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector |
| abstract |
A thin InGaAs contact layer is provided for the collector of a heterojunction bipolar transistor (HBT) above an InP sub-collector. The contact layer provides a low resistance contact mechanism and a high thermal conductivity path for removing device heat though the sub-collector, and also serves as an etch stop to protect the sub-collector during device fabrication. A portion of the sub-collector lateral to the remainder of the HBT is rendered electrically insulative, preferably by an ion implant, to provide electrical isolation for the device and improve its planarity by avoiding etching through the sub-collector. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11451199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9692357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9755592-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9419567-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9520835-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090812-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10116274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9660584-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9041472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10771024-B2 |
| priorityDate |
2002-02-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |