| abstract |
A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used. |