| abstract |
A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: n n wherein R 1 is H, C 1 -C 4 alkyl, or CF 3 ; Q is C 4 -C 12 cycloalkyl; R 2 is H, C 1 -C 4 alkyl, or CF 3 ; R 3 is C 4 -C 12 branched or cyclic alkyl; and x+y+z equals to 1. The chemically-amplified resist compositions of the present invention not only can be applied maturely to general lithographic processes, especially to 193 nm lithographic process, but also have excellent photo-sensitivity, and can form a well-resolved pattern and profile. |