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publicationDate 2005-06-28^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6911373-B2
titleOfInvention Ultra-high capacitance device based on nanostructures
abstract The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. n The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.
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