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filingDate 2003-12-19^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-05-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7037809-B2
titleOfInvention Method of manufacturing semiconductor device using a laser irradiation process
abstract The present invention provides a semiconductor device manufacturing method where a beam spot is formed by having respective beam spots of a plurality of laser lights overlap each other on a semiconductor film using an optical system. Crystallinity, in a region determined by pattern information, is enhanced by scanning the beam spot to form an island-like semiconductor film based on the pattern information.
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