| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-936 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7839
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2004-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2c32d042543b1d7793b19fefb627ee4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a85c6d2c9781265630bff4957995d0a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ea67f852809d6bc9a9a259c2d25fd0 |
| publicationDate |
2007-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7180109-B2 |
| titleOfInvention |
Field effect transistor and method of fabrication |
| abstract |
The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8252675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8129749-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8278687-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7763943-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8440998-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009206404-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7573083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007126042-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009242873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009242872-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011147706-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009166742-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009166741-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011147708-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8872160-B2 |
| priorityDate |
2002-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |