| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a6c760472ee4c29e9cd26152ace2eb0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-773
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2004-10-01^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-04-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edd41a7ec0e9f1590f9a58437d3aa1a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1063b4dfd7d1452954e986a280e7bf9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4fdf8cdc9a3a585a0ddc4807df34266 |
| publicationDate |
2007-04-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7199029-B2 |
| titleOfInvention |
Selective deposition of ZnO nanostructures on a silicon substrate using a nickel catalyst and either patterned polysilicon or silicon surface modification |
| abstract |
Zinc-oxide nanostructures are formed by forming a pattern on a surface of a substrate. A catalyst metal, such as nickel, is formed on the surface of the substrate. Growth of at least one zinc oxide nanostructure is induced on the catalyst metal substantially over the pattern on the surface of the substrate based on a vapor-liquid-solid technique. In one exemplary embodiment, inducing the growth of at least one zinc-oxide nanostructure induces growth of each zinc-oxide nanostructure substantially over a patterned polysilicon layer. In another exemplary embodiment, when growth of at least one zinc-oxide nanostructure is induced, each zinc-oxide nanostructure grows substantially over an etched silicon substrate layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8353996-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8087151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9309128-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010012919-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101772694-B1 |
| priorityDate |
2004-10-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |