| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2005-12-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19e66730ae94f2dd30255c8d2417ebb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb86c5ef7ed264ac6d183b6435e0a9db |
| publicationDate |
2007-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7282413-B2 |
| titleOfInvention |
Semiconductor device including nonvolatile memory and method for fabricating the same |
| abstract |
A semiconductor device including a nonvolatile memory and the fabrication method of the same is described formed on a semiconductor substrate. According to the semiconductor device, a second gate electrode film is used for a gate electrode film of a logic circuit, and for a control gate electrode film of a nonvolatile memory. As the second gate electrode film is formed at a relatively later step in fabrication, subsequent thermal process may be avoided. The gate structure is suitable for miniaturization of the transistor in the logic circuit. |
| priorityDate |
2003-06-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |