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filingDate 2005-10-27^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-11-27^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8744a48faef007cd9104e393cb4e99f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21971bf04ab3fb1918cb9425a3fb57cb
publicationDate 2007-11-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7301817-B2
titleOfInvention Method for programming of multi-state non-volatile memory using smart verify
abstract In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (V TH ) that falls within a first V TH distribution or a higher, intermediate V TH distribution. Subsequently, the non-volatile storage elements with the first V TH distribution either remain there, or are programmed to a second V TH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate V TH distribution are programmed to third and fourth V TH distributions. The non-volatile storage elements being programmed to the third V TH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth V TH distribution is initiated after one of the identified non-volatile storage elements transitions to the third V TH distribution from the intermediate V TH distribution.
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