| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d05f400bdfb3dda36ea3a4026b752b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49043 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3929
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 |
| filingDate |
2006-03-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-02-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_334c1c664f0b83bee653c4c857a263ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2a34e2161a68d27251ea205d40acc67 |
| publicationDate |
2008-02-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7325295-B2 |
| titleOfInvention |
Structure/method to form bottom spin valves for ultra-high density |
| abstract |
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which is a more uniform and dense layer than such layers formed by high temperature annealing or reactive-ion etching. In one embodiment, the sensor has an ultra thin composite free layer and a high-conductance layer (HCL), providing high output and low coercivity. In a second embodiment, along with the same NOL, the sensor has a laminated free layer which includes a non-magnetic conductive layer, which also provides high output and low coercivity. The sensors are capable of reading densities exceeding 60 Gb/in 2 . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7542249-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006056116-A1 |
| priorityDate |
2003-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |