| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94b51d317764e2f4f1bbcb355b274c8b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-1628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-0637 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-2257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-0941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-025 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-0941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-00 |
| filingDate |
2004-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-03-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b158b88ced5a35d81c682663f8b56bbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98bf24021314c20397f012d7136bc3c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_613ef2ab4075214d85cb43cf61181054 |
| publicationDate |
2008-03-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7345812-B2 |
| titleOfInvention |
Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications |
| abstract |
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008073744-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110191379-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148794-B2 |
| priorityDate |
2003-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |