| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e84fb92eb718d60e248c8566c78c0aa7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-868 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B17-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 |
| filingDate |
2003-04-29^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0021d0a9d555226f55fd3a6f56d5eb3c |
| publicationDate |
2008-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7361406-B2 |
| titleOfInvention |
Ultra-high current density thin-film Si diode |
| abstract |
A combination of a thin-film μc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm 2 , comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of μc-Si deposited the bottom metal layer; an i-layer of μc-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of μc-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8120134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796806-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8476140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011089413-A1 |
| priorityDate |
2003-04-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |