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publicationDate 2008-07-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7402519-B2
titleOfInvention Interconnects having sealing structures to enable selective metal capping layers
abstract Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
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