http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7417274-B2

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
filingDate 2006-07-25^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-08-26^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78c0659ae1964cf56080da1885214bec
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publicationDate 2008-08-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7417274-B2
titleOfInvention Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same
abstract A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008277706-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7893472-B2
priorityDate 2005-09-07^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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