Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2211-5621 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3459 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-04 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 |
filingDate |
2007-12-18^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2008-12-02^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fae89a8904582f09ff789720e765351e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_129177039fa59fc3d89d73d8cd1490f4 |
publicationDate |
2008-12-02^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7460407-B2 |
titleOfInvention |
Temperature compensation of voltages of unselected word lines in non-volatile memory based on word line position |
abstract |
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9715937-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583198-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10176881-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082502-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157676-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633742-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9047983-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202579-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE45700-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8750066-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8611157-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008247254-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008205160-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8576651-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515707-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7778084-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026483-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705203-B2 |
priorityDate |
2006-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |