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filingDate 2007-12-18^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-12-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7460407-B2
titleOfInvention Temperature compensation of voltages of unselected word lines in non-volatile memory based on word line position
abstract Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position.
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