http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7470975-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-022 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 |
| filingDate | 2006-06-05^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-12-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c560ad17b395855aa6a3b1cee8838a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db47a1d6e1a4e4d7a401d984dffeafc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b97f67087d2035860d0499776c36468d |
| publicationDate | 2008-12-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7470975-B2 |
| titleOfInvention | Composition for forming insulation film, insulation film for semiconductor device, and fabrication method and semiconductor device thereof |
| abstract | It is an object of the present invention to provide, with good yields, a composition for forming an insulation film which allows obtaining an insulation film for a semiconductor device having a low dielectric constant, excellent stress resistance and excellent crack resistance; an insulation film for a semiconductor device formed from the composition for forming an insulation film; and a high quality and highly reliable semiconductor device fabricated using the insulation film for a semiconductor device. This composition for forming an insulation film comprises a polymer of which the main chain is a chain portion which substantially contains only carbon, silicon and hydrogen, and which contains nitrogen in portions other than the main chain. It is preferable that nitrogen exists as a constituent represented by Formula 1 in the polymer. |
| priorityDate | 2006-02-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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