Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-09881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-1173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4647 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4664 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
filingDate |
2005-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2009-05-26^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0665e2eb608f10339ec3a27ff696351d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a942c5bbdc2742a2ccc0d45f8b490439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_878f969c7ffb26859a2db799b7d44dc5 |
publicationDate |
2009-05-26^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7538031-B2 |
titleOfInvention |
Method of manufacturing a wiring substrate and an electronic instrument |
abstract |
A method of manufacturing a wiring substrate having a wiring layer formation step that includes: a first surface processing step in which surface processing is performed on a film formation area of a substrate; a wiring formation step in which a wiring pattern is formed by placing a first liquid material on the film formation area; a second surface processing step in which surface processing is once again performed on the film formation area; and an insulating film formation step in which an insulating film is formed by placing a second liquid material in gaps in the wiring pattern, wherein an affinity between the second liquid material and the film formation area in the insulating film formation step is greater than an affinity between the first liquid material and the film formation area in the wiring formation step. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006188661-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012171356-A1 |
priorityDate |
2004-09-28^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |