| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2007-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-08-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57ea0fbd119e4de875f4fa3131a63d0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb2910626e751b42b8a2decc3b404169
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a42ce562de3112d61cc7168a51bebe3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052982ab70f45e1353e49b25a7afbe5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd2e980544f1e7a6d4fe6a0b9e920816 |
| publicationDate |
2009-08-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7579272-B2 |
| titleOfInvention |
Methods of forming low-k dielectric layers containing carbon nanostructures |
| abstract |
Methods of forming low-k dielectric layers for use in the manufacture of semiconductor devices and fabricating semiconductor structures using the low-k dielectric material. The low-k dielectric material comprises carbon nanostructures, like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate. One approach for converting the carbon nanostructures to the insulating electronic state is fluorination. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009213830-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466723-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8664657-B2 |
| priorityDate |
2004-10-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |