| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_950bce8d103dab1bd282965fde47f9f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2005-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32efb33afc79979393d2628b3fd8db04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcc967c6dbaf9a8a2dc97392f24e4edc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e4173128b3d7ea60a6777b61e7879b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6895aece2b37a86f1ff992fed360a4d |
| publicationDate |
2009-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7629272-B2 |
| titleOfInvention |
Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics |
| abstract |
Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011189329-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8541301-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008012074-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8716150-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623741-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008171431-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009140458-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010072671-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7723226-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011183525-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013207245-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7871835-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8927430-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492239-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010084376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8314005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010047936-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010104852-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8470188-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9778562-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871632-B2 |
| priorityDate |
2004-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |