| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2006-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e2175c9219bbc793c8dde3f525f64c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b67e2da97fd009230a32fc81892613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74b593d93367e812acae50a26a4ae96c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20dbd770c18daaadc0898fcaa5808f41 |
| publicationDate |
2010-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7700470-B2 |
| titleOfInvention |
Selective anisotropic wet etching of workfunction metal for semiconductor devices |
| abstract |
Embodiments of an apparatus and methods for providing a workfunction metal gate electrode on a substrate with doped metal oxide semiconductor structures are generally described herein. Other embodiments may be described and claimed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012313149-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293333-B2 |
| priorityDate |
2006-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |