| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75b765b53e6651e9863a3a35e4c1e164 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2009-09-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2423d47bd86202299cdd12e2c6a031c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a4fe6ddc0437ba86a7850655523e642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a0090833e4ec69d543f785d5d4b5292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5311a386ea27053922722502688f5e5 |
| publicationDate |
2010-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7763529-B2 |
| titleOfInvention |
Method of fabricating silicon carbide (SiC) layer |
| abstract |
A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S 1 ) heating a silicon-based substrate at a temperature of X ° C.; (S 2 ) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y ° C. to form a carbide layer on the silicon-based substrate; (S 3 ) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z ° C.; and (S 4 ) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W ° C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X<Y≦Z≦W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9732439-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10857106-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9895321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10780062-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012037067-A1 |
| priorityDate |
2008-10-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |