| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337 |
| filingDate |
2007-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-11-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc94361aa0ec022936d58e6d12e8a6e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93165693fedbb7de90f51cf54b6b9d92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf67489fcb6e94163006e393b4157c32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4c3fa61c935ab2cbe4df34f4ed425be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1d9507953b127c92f41a46caafe9356 |
| publicationDate |
2010-11-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7825441-B2 |
| titleOfInvention |
Junction field effect transistor with a hyperabrupt junction |
| abstract |
A junction field effect transistor (JFET) has a hyperabrupt junction layer that functions as a channel of a JFET. The hyperabrupt junction layer is formed by two dopant profiles of opposite types such that one dopant concentration profile has a peak concentration depth at a tail end of the other dopant profile. The voltage bias to the channel is provided by a body that is doped with the same type of dopants as the gate. This is in contrast with conventional JFETs that have a body that is doped with the opposite conductivity type as the gate. The body may be electrically decoupled from the substrate by another reverse bias junction formed either between the body and the substrate or between a buried conductor layer beneath the body and the substrate. The capability to form a thin hyperabrupt junction layer allows formation of a JFET in a semiconductor-on-insulator substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8481380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825901-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937888-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840388-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8779476-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825902-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058674-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011079824-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012074469-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879357-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021011615-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021011629-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021011620-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868120-B1 |
| priorityDate |
2007-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |