| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_68c213ba9952360f439567152e047b18 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S505-704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-932 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B35-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B35-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B35-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B35-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B2-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-08 |
| filingDate |
2009-03-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f304d2496bbe708d7264afcda1b9c9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d94be2b207475cbe09b7cf071aec9bfa |
| publicationDate |
2011-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7884450-B2 |
| titleOfInvention |
Growth of boron nanostructures with controlled diameter |
| abstract |
A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K. |
| priorityDate |
2003-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |