| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate |
2008-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-02-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65ba41f70203e20273801dc26d5cf512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0366e5bc2bba8b01027b373d2fbd450e |
| publicationDate |
2011-02-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7893520-B2 |
| titleOfInvention |
Efficient interconnect structure for electrical fuse applications |
| abstract |
A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263386-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134631-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484254-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011024873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8836124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8916461-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014077334-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9099468-B2 |
| priorityDate |
2008-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |