Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate |
2009-05-05^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-05-03^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_343148f3e74b63c12a1ff0a56da7da90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ff0ae79a3ed1a7fe4b0a95a1dc6b736 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38dc07b8a029416e428714020a6bfeea |
publicationDate |
2011-05-03^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7936070-B2 |
titleOfInvention |
Semiconductor device and method for fabricating semiconductor device |
abstract |
A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997400-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347527-B2 |
priorityDate |
2008-05-16^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |