http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7999335-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01H1-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01H2001-0057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01H2001-0052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-018 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01H59-0009 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 |
| filingDate | 2008-12-03^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-08-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4d69424e1f0fba17c5cd555a6046ac5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebee83623ffadb1858d464836f4653b1 |
| publicationDate | 2011-08-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7999335-B2 |
| titleOfInvention | Micromachine and method for manufacturing the same |
| abstract | A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11139134-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8648663-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669824-B2 |
| priorityDate | 2007-12-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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