| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-443 |
| filingDate |
2010-06-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-08-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b9cd172fa82a210d15e82411d9cfe3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94615992154bb57a72a895a2ceeb6bcb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5720112c3192d045a3bba428926c28a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c910a38e71795ab60e1e75bb0082e048 |
| publicationDate |
2011-08-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8003528-B2 |
| titleOfInvention |
Semiconductor structure and method for making the same |
| abstract |
A method for forming a semiconductor structure is provided. The method includes providing a substrate; forming a dielectric layer on the substrate; forming a conductor pattern on a main surface of the dielectric layer, the conductor pattern having a top surface and sidewalls; and performing a selective atomic layer deposition (ALD) process to selectively deposit a conformal metal layer onto the top surface and sidewalls of the conductor pattern, but without depositing onto the main surface of the dielectric layer substantially. |
| priorityDate |
2009-05-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |