| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2007-01-24^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-09-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8aaae9664583d78fcdf432fcbdddf3f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5afe31e72d6da33cd0d2b80354014c8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7014d74565b517932d06509917d84319
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57206638f22b4d9100fcac3d3034b991 |
| publicationDate |
2011-09-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8017522-B2 |
| titleOfInvention |
Mechanically robust metal/low-κ interconnects |
| abstract |
A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019157213-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127683-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019229063-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022139833-A1 |
| priorityDate |
2007-01-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |