| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3dd1783d43c01fec91bc539c40900d29 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-04886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-0486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-04817
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04M1-72472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-02-11^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22ffc2327f948e93234e53e79681af98 |
| publicationDate |
2012-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8168488-B2 |
| titleOfInvention |
Systems and methods for reducing contact to gate shorts |
| abstract |
A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed on a substrate, a contact is formed on the gate and the substrate, and an insulator is formed between the gate and the contact. The insulator may be formed by oxidizing the gate to form a dielectric between the contact and the gate after the contact is formed on the gate. |
| priorityDate |
2006-12-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |