| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_450ab5e48d953a8dddd9d0a59aa867c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af4ed0f969cb72157509c36e3a585004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_96872fb030ae8eb1b077e94faa74e6c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12354
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12806 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D5-12 |
| filingDate |
2009-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ad856defd89edf8b43d710bc7cd5060
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c8212f288fa87031db9d207e04ad0a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52fa42ac5b924626f2441ee434b54ac1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_560eb5cbaed763082003d69f36edf38c |
| publicationDate |
2012-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8182863-B2 |
| titleOfInvention |
Deposition method and manufacturing method of light-emitting device |
| abstract |
A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011275191-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8618568-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8956709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8703579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012012883-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012225221-A1 |
| priorityDate |
2008-03-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |