| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_568f91172889558732adbc5df6d72ce5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b4803384ac928e682e603b9e590633f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66421988cb9fe3911f45f1d9ea25b587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1442fb7256b841bf70b03f256214bc75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2011-10-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-06-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_990de1bbf2ab21337899959f01d5efe5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dee6e5a47df0f550ab8ebb42a85a6e28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f5b44917838d8a78993e1880e12b0a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d57aa7350c274cd2e498fdbad7baa0a |
| publicationDate |
2012-06-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8193548-B2 |
| titleOfInvention |
Light-emitting diode |
| abstract |
An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8525215-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012001196-A1 |
| priorityDate |
2010-05-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |