http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8263484-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-868
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425
filingDate 2010-03-01^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-09-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f956fea8548b66b60b9b10242498360
publicationDate 2012-09-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8263484-B2
titleOfInvention High resistivity silicon wafer and method for manufacturing the same
abstract This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 k Ωcm, an oxygen concentration Oi of 5.0×10 17 to 20×10 17 atoms/cm 3 (ASTM F-121, 1979), and a nitrogen concentration of 1.0×10 13 to 10×10 13 atoms/cm 3 (ASTM F-121, 1979) by using a Czochralski method, processing the single crystal into wafers by slicing the single crystal, and subjecting the wafer to an oxygen out-diffusion heat treatment process in a non-oxidizing atmosphere.
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priorityDate 2009-03-03^^<http://www.w3.org/2001/XMLSchema#date>
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