http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8294476-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c5f92ca71b597c7c2ac10d1d134ca14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_751b250d656b41fcef60b8d63e7eac3c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc9524d75adffeb8950801273ab3e62a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-0009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-28 |
| filingDate | 2010-06-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-10-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a55d1611aae2dfabfcbcd4232c82cdb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c0a260854aed5383534bb74b67a5e6a |
| publicationDate | 2012-10-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8294476-B2 |
| titleOfInvention | Method of sensor cell timing |
| abstract | A method for measuring values from a sensor cell having the basic structure of an MOS silicone transistor having and including a polymer material therein. The method includes the steps of expelling an analyte from the polymer material, determining a silicon current signature before analyte accumulation in a sensitive response region, introducing analyte into the polymer material, determining the silicon current signature immediately after analyte introduction, determining the organic current signature immediately after analyte introduction, allowing analyte accumulation in the polymer material, determining the silicon current signature after analyte accumulation, determining the organic current signature after analyte accumulation, and determining the silicon current signature after analyte accumulation in sensitive response region. |
| priorityDate | 2010-05-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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