http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8305831-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-413
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14
filingDate 2010-09-20^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-11-06^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2b0f08cb4dc0b04372366b34adaee8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37552b251f3275cdfb2c3ad0b01d322c
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publicationDate 2012-11-06^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8305831-B2
titleOfInvention Power management
abstract An SRAM includes circuitry configured for the SRAM to operate at different operation modes using different voltage levels wherein the voltage level and thus the supply current leakage is regulated based on the operation mode. For example, the SRAM, in a normal operation mode, consumes power as other SRAMs. In a deep sleep mode the supply voltage (e.g., VDDI) for the bit cell in the SRAM macro is lowered by about 20-40% of the SRAM supply voltage (e.g., VDD), sufficient to retain the data in the bit cell. When access to the SRAM is not needed, the SRAM operates in the sleep mode, consuming little or no power.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10664035-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872659-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299419-B1
priorityDate 2009-10-15^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419479716
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID54690031

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