http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309406-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f3e5fce8dfd83a8dfe967ed5a7ad20c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate | 2011-12-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_415cbdff105b3ce903f2f96e5e6d81e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9961915b57e230518e153670ecb7975a |
| publicationDate | 2012-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8309406-B2 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | Electric characteristics of a thin film transistor including a channel formation region including a microcrystalline semiconductor are improved. The thin film transistor includes a gate electrode, a gate insulating film formed over the gate electrode, a microcrystalline semiconductor layer formed over the gate insulating film, a semiconductor layer which is formed over the microcrystalline semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the semiconductor layer. A channel is formed in the microcrystalline semiconductor layer when the thin film transistor is placed in an on state, and the microcrystalline semiconductor layer includes an impurity element for functioning as an acceptor. The microcrystalline semiconductor layer is formed by a plasma-enhanced chemical vapor deposition method. In forming the microcrystalline semiconductor layer, a process gas is excited with two or more kinds of high-frequency electric power with different frequencies. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015349128-A1 |
| priorityDate | 2007-08-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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