| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2128206c2cb4e9e242ca87a2048b4384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ff1904fbf3174c60ba2399bbcf5986c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd6870bfddc7342877b87b64e8c93b7c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2009-01-23^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c71826708c2e89d6f6a9e3ad9166b04c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_916535f24ee74deaa7cc53fae2e5e4d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_112873cc591cbeba688286518db3306d |
| publicationDate |
2012-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8318410-B2 |
| titleOfInvention |
Sulfur atom-containing resist underlayer film forming composition and method for forming resist pattern |
| abstract |
It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10113022-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11635692-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11003081-B2 |
| priorityDate |
2008-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |