http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8374020-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f205c7da46618d42a32c4b085ec534
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-00
filingDate 2010-10-29^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-02-12^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89018393eac1437dcc61c92c00a54d9a
publicationDate 2013-02-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8374020-B2
titleOfInvention Reduced switching-energy magnetic elements
abstract A system includes a continuous thin-film ferromagnetic layer, N magnetic tunnel junction (MTJ) devices, and N write structures. The continuous thin-film ferromagnetic layer includes N modified regions. Each of the N modified regions is configured to stabilize a magnetic domain wall located in the continuous thin-film ferromagnetic layer. Each of the N MTJ devices includes one of N portions of the continuous thin-film ferromagnetic layer. Adjacent MTJ devices of the N MTJ devices are separated by one of the N modified regions. Each of the N write structures is configured to receive current and generate a magnetic field that magnetizes a different one of the N portions of the continuous thin-film ferromagnetic layer. N is an integer greater than 2.
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priorityDate 2010-10-29^^<http://www.w3.org/2001/XMLSchema#date>
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