| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d813ce3c8c7d2b771dad3971e42b94ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88c5699433ed0b4d77b30299503f21d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a78f4cbdc519c496e9f3352b6b748eb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F17-0006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P1-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-145 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K5-00 |
| filingDate |
2010-07-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8e637fc22c0aa9a5af029f30f0b3128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06f82be7151548b73c1f3880b063f92b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf7f4d14352d03725a3dd23ba3c8be5d |
| publicationDate |
2013-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8405453-B2 |
| titleOfInvention |
Millimeter-wave on-chip switch employing frequency-dependent inductance for cancellation of off-state capacitance |
| abstract |
A semiconductor switching device includes a field effect transistor and an inductor structure that provides a frequency dependent inductance in a parallel connection. During the off-state of the semiconductor switching device, the frequency dependent impedance component due to the off-state parasitic capacitance of the switching device is cancelled by the frequency dependent inductance component of the inductor structure, which provides a non-linear impedance as a function of frequency. The inductor structure provides less inductance at a higher operating frequency than at a lower operating frequency to provide more effective cancellation of two impedance components of the parasitic capacitance and the inductance. Thus, the semiconductor switching device can provide low parasitic coupling at multiple operating frequencies. The operating frequencies of the semiconductor switching device can be at gigahertz ranges for millimeter wave applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8686522-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859300-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013161785-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012153489-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013125079-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8823136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9223927-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013093032-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8592982-B2 |
| priorityDate |
2010-07-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |