| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cc384ce715e44158fd82c268277b1a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_281b6ffa43d3c4ce5be3d36f61b20482 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-047 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337 |
| filingDate |
2010-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33d9bfb5ade247601c3b7d6d8c763d48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dedbdffe02b0652bd727543cd37732aa |
| publicationDate |
2013-06-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8466017-B2 |
| titleOfInvention |
Methods of making semiconductor devices having implanted sidewalls and devices made thereby |
| abstract |
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices are made using selective ion implantation using an implantation mask. The devices have implanted sidewalls formed by scattering of normal or near normal incident ions from the implantation mask. Vertical junction field-effect transistors with long channel length are also described. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8947154-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905645-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8937317-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10038104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324809-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324645-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013032814-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10944003-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136116-B2 |
| priorityDate |
2009-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |