Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a0252a65910c86d553d68ed3e5ec29f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6119b343b4ffcb4e3ae6b69bfc11bfc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a41b07d71aecfaf546b68d8b12314d25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_870b2b297aa0b41807e6f385fb4b31b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2af4fa54541ffebbf8d9c243383df60 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34 |
filingDate |
2012-09-06^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec548e8794f5d08d60e350f6e90f775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e8dc2d7faf591a7e16be24af92a0960 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c679f6300b9e2aa84c574cb499bc437e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b703747da1745d1973f710b816d72a7e |
publicationDate |
2013-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8472255-B2 |
titleOfInvention |
Compensation of non-volatile memory chip non-idealities by program pulse adjustment |
abstract |
To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299443-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548124-B1 |
priorityDate |
2007-09-27^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |