| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ce1f6ae108dae0c67db308559ff09a9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c76eb497e9f79292642262319fba694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_954eada4b4bc9a217c5db0530ee0a963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9093139e1cf8ea6ef25b37aaa642a59 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2011-10-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e43ade0a658d5556b30ace3b10c9dd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44bbd5a4a0f2b334241cd13cd7afd9de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55d254f54a7ed4e4b45ef2eebe491bb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c0da2645c5606c078985925ac2f9c56 |
| publicationDate |
2013-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8476162-B2 |
| titleOfInvention |
Methods of forming layers on substrates |
| abstract |
Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10094023-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9637819-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104157562-A |
| priorityDate |
2010-10-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |