| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a50c5a0d8453b6b33dcf5c8ead6592e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b336c55ac1c4f9f3440d5c3a0eabe4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cc384ce715e44158fd82c268277b1a6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66893
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1058 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2011-05-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bed3d16f65bf8925cfce406069b866f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc5dec7a991899844554d3ce5b8f38dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ed9bee9b29947fb356e01f701376657 |
| publicationDate |
2013-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8507335-B2 |
| titleOfInvention |
Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
| abstract |
Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides non-punch-through behavior and enhanced current conduction capability. The devices can be power semiconductor devices as such as Junction Field-Effect Transistors (VJFETs), Static Induction Transistors (SITs), Junction Field Effect Thyristors, or JFET current limiters. The devices can be made in wide bandgap semiconductors such as silicon carbide (SiC). According to some embodiments, the device can be a normally-off SiC vertical junction field effect transistor. Methods of making the devices and circuits comprising the devices are also described. |
| priorityDate |
2008-05-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |